Question

the approximate voltage across the forward - biased base - emitter junction of a silicon bjt is
select one:
o a. 0.3v
o b. 0v
o c. 0.7v
o d. vbb

Explanation:

In a silicon BJT (Bipolar Junction Transistor), the forward - biased base - emitter junction has a characteristic voltage drop. For silicon devices, this voltage is approximately 0.7 V. Germanium devices have a forward - biased base - emitter voltage of around 0.3 V, so option a is incorrect. A voltage of 0 V (option b) is not possible as a forward - biased junction has a voltage drop. VBB (option d) is the base - bias voltage, not the voltage across the base - emitter junction.

Answer:

c. 0.7 V